- Mfr. #:
- SIZ914DT-T1-GE3
- Description:
- MOSFET RECOMMENDED ALT 78-SIZ980DT-T1-GE3
- Lifecycle:
- New from this manufacturer.
- Delivery
- DHL / FedEx / Ups / TNT / EMS
- Payment
- T/T / Paypal / Visa / MoneyGram / Western / Union
Specifications
| RoHS: | Y |
|---|---|
| Brand: | Vishay / Siliconix |
| Manufacturer: | Vishay |
| Tradename: | TrenchFET |
| Technology: | Si |
| Mounting Style: | SMD/SMT |
| Series: | SIZ |
| Packaging: | Reel |
| Package / Case: | PowerPAIR-6x5-8 |
| Transistor Polarity: | N-Channel |
| Subcategory: | MOSFETs |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Channel Mode: | Enhancement |
| Configuration: | Dual |
| Length: | 6 mm |
| Forward Transconductance - Min: | 55 S, 68 S |
| Rds On - Drain-Source Resistance: | 5.3 mOhms, 1.14 mOhms |
| Fall Time: | 5 ns, 19 ns |
| Width: | 5 mm |
| Factory Pack Quantity: | 3000 |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Qg - Gate Charge: | 26 nC, 99 nC |
| Pd - Power Dissipation: | 22.7 W, 100 W |
| Vgs - Gate-Source Voltage: | 20 V, - 16 V |
| Transistor Type: | 2 N-Channel |
| Number of Channels: | 2 Channel |
| Typical Turn-On Delay Time: | 16 ns, 40 ns |
| Id - Continuous Drain Current: | 16 A, 40 A |
| Typical Turn-Off Delay Time: | 15 ns, 40 ns |
| Rise Time: | 11 ns, 127 ns |
| Vgs th - Gate-Source Threshold Voltage: | 1.2 V, 1 V |
| Height: | 0.75 mm |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
More Information
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Vishay Siliconix SIZ914DT-T1-GE3 pricing and available inventory.
Alternate Names
Vishay Siliconix has several brands around the world that may have alternate names for SIZ914DT-T1-GE3 due to regional differences or acquisition. SIZ914DT-T1-GE3 may also be known as the following names:
- Siliconix / Vishay
- Siliconix (Vishay Siliconix)
- VISHAY SILICONIX INC
- VISHAY-SILICONIX(RoHS)
- VISHAY AMERICAS/SILICONIX
- SILICONIX INC/VISHAY
- SILI / VIS